Performance and optical characteristic of InGaN MQWs laser diodes

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The performance of the InGaN multi-quantum wells (MQWs) laser diode structures has been numerically investigated by using ISE TCAD software. We investigated the effect of well numbers, barrier thickness and barrier doping on the output power, threshold current, and slope efficiency. All material parameters used in the model are evaluated based on the recent literature values. We observed the maximum output power and lower threshold current when the well number was two. Effective change in the output power and threshold current was observed with the variations in barriers thickness and doping level. Our results are in agreement with the experimental results observed by [S. Nakamura et al. Jpn. J. Appl. Phys. Part 2, 37, L1020 (1998) and S. Nakamura et al. Appl. Phys. Lett. 76, 22 (2000)].