High-performance GaN-based green laser diodes with low thermal degradation via hybrid MOCVD-MBE growth

The high-temperature growth of p-type layers via metal-organic chemical vapor deposition (MOCVD) often leads to thermal degradation of the InGaN quantum wells (QWs) in green laser diodes. In this study, a hybrid MOCVD-MBE (molecular beam epitaxy) growth approach was employed to fabricate green laser diodes, achieving high device performance and excellent uniformity, with a lasing wavelength of 504.9 nm and a threshold current density of 2.8 kA/cm2. Comparative device performance investigation demonstrates that replacing the MOCVD-grown p-type layers with those grown by MBE effectively suppresses thermal degradation in green InGaN QWs.