Rapid Thermal Annealing of Si+ Implanted GaAs in the Presence of Arsenic Pressure by GaAs Powder

Rapid thermal annealing of Si+ implanted GaAs is carried out using halogen lamps in the presence of arsenic pressure to study the effects of annealing temperature and time on sheet carrier concentration and mobility. The activation efficiency of the implanted layer is primarily affected by the annealing temperature and depends little on the annealing hold time. The surface morphology of GaAs annealed for 30 min at 800°C is smooth, indicating that the presence of arsenic pressure prevents arsenic atoms from evaporating and enables the implanted layer to be annealed for a long time at high temperature without surface dissociation and degradation of electrical properties. The activation energy of implanted Si+ in GaAs is found to be 0.53 eV.