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The transfer printing of aluminum gallium arsenide (AlGaAs) microdisk resonators onto a silicon-on-insulator (SOI) waveguide platform is demonstrated. The integrated resonators exhibit loaded Q -factors reaching 4 × 10 4 , and the vertical assembly approach allows selective coupling to different spatial mode families. The hybrid platform’s nonlinearity is characterized by four-wave mixing with a measured nonlinear coefficient of γ = 325 ( W m ) − 1 , with the devices demonstrating minimal two-photon absorption and free-carrier absorption losses that are inherent to SOI at telecommunications wavelengths.
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McPhillimy et al. (2020) studied this question.
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