A new planar InP/GaInAsP/GaInAs buried-structure avalanche photodiode, which has a buried active region and an n−-InP guardring region, has been developed. A useful guardring effect and a uniform multiplication are obtained in the multiplication range of up to 30. The diode shows a dark current of 10 nA at a bias of 90% of the breakdown voltage, a maximum avalanche gain of 50 under 1.3-μm light irradiation, and a gain-bandwidth product of about 16 GHz.
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Kobayashi et al. (1984) studied this question.
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