We have deposited indium oxide (In2O3) films on silicon substrates by the metal organic chemical vapor deposition (MOCVD). We have investigated the effect of substrate temperature on growth and structural properties of films in the range of 200–300 °C. The films had a preferred orientation along [111] direction, with the X‐ray diffraction (XRD) full width at half‐maximum (FWHM) of less than 0.4°.
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Kim et al. (2004) studied this question.
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