High-quality indium oxide films at low substrate temperature

Low-resistivity (ρ) and highly transparent pure indium oxide (In2O3) thin films grown on glass substrates by pulsed laser deposition at substrate temperature (Ts) between room temperature and 200 °C are reported. As-deposited films with resistivity (ρ) of ∼3×10−4 Ω cm and transmittance (visible), above 87% were obtained within a narrow range of PO2 (1×10−2–1.5×10−2 Torr). Hall effect measurements showed that the low ρ resulted from the high carrier concentration (n)∼7×1020 cm−3, whereas modest Hall mobility (μ<45 cm2 V−1 s−1) was measured. X-ray diffraction indicated that the films prepared at Ts⩽100 °C were amorphous, while at Ts⩾150 °C polycrystalline films were obtained.