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The relationship between microstructure and electron characteristics of indium tin oxide (ITO) films was investigated. The microstructure and resistivity were found to be dependent on the oxygen partial pressure in the sputtering ambient. Lower resistivity ITO films had a domain structure and a small amount of surface roughness. The small roughness and the large size domain structure caused a decrease in electron scattering, and hence an increase in mobility. Crystallinity was also affected by the oxygen partial pressure. For ITO films with a domain structure, the relative x‐ray diffraction intensity of the (440) crystal plane increased.
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Higuchi et al. (1993) studied this question.
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