Emitter current suppression in a high-low-junction emitter solar cell using an oxide-charge-induced electron accumulation layer

A new type of high-low-junction emitter silicon solar cell employing an oxide-charge-induced electron accumulation layer demonstrates complete suppression of the dark emitter recombination current JE to values so low that the base recombination current dominates in determining the open-circuit voltage VOC. This suppression of JE results in measured values of VOC considerably larger than those previously reported for n-on-p silicon solar cells. This ability to suppress JE leads to projections of efficiency of about 18% AM0 and about 20% AM1 for this oxide-charge-induced high-low-junction emitter (OCI-HLE) solar cell.