A single-crystalline MgO film was grown on GaAs(001) by constructing a complex heterostructure with two alkali halide buffer layers. The growth temperature was decreased to 150°C as compared with direct growth of MgO on GaAs(001). Electron energy loss spectrum of the grown film agreed well with that of bulk MgO, indicating that surface stoichiometry was maintained. The structure was stable up to 600°C against heating in UHV condition. The concept of a complex heterostructure will help fabrication of functional oxide layers on GaAs substrates and lead to oxide/semiconductor integrated devices.
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Saiki et al. (1998) studied this question.
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