The desorption of Ga atoms from GaAs films at high substrate temperatures was utilized as an etch-back method for the reduction of highly-resistive layers formed around growth-interrupted interfaces in Si-doped GaAs. The mechanism of the reduction of the highly-resistive layer was studied by a C-V carrier profiling technique, secondary-ion mass spectroscopy and deep-level transient spectroscopy, and was clarified as being due to compensation by Si atoms accumulated on the GaAs surface during the thermal etching procedure.
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Iimura et al. (1986) studied this question.
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