Investigations on Al/SiN x /pn-GaAs gated diodes reveal that the forward current I F in the recombination current region consists of a bulk current part being generated in the depletion region of the metallurgical p–n junction, and a surface recombination current part occurring at the intersection plane of this depletion region with the semiconductor surface. A variation of the gate length influences neither surface current nor HF capacitance of the p–n junction. However, the surface current can be controlled by the gate bias. A simple model using surface recombination at the junction perimeter enables evaluation of surface recombination velocity s o and carrier lifetime τ o in the depletion region of the p–n junction. Thus the 2 kT recombination current of the gated diodes can be separated into a surface and a bulk part. This method can also be applied to other A III B V semiconductors.
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Kaden et al. (2005) studied this question.
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