Relatively good-quality oxide of GaAs was grown using magnetically excited oxygen plasma (helicon wave) with substrate heating (300°C) or a mixture of Ar gas in oxygen. Post-thermal annealing at 400°C in oxygen substantially improved the capacitance-voltage ( C–V) characteristics, which showed very small frequency dispersion without hysteresis. However, no inversion behavior was observed. X-ray photoelectron spectroscopic measurements showed that As2O3 and Ga2O3 are the main component species of these oxides.
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Nakamura et al. (1996) studied this question.
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