Formation of High-Tc Superconducting BiSrCaCu2Ox Films on ZrO2/Si(100)

High-T c superconducting BiSrCaCu2O x films have been successfully prepared on Si(100) wafer coated with epitaxially grown tetragonal ZrO2 as a buffer layer. The films have been formed by pyrolysis of 2-ethylhexanoates. Regarding superconducting features, T c(onset) observed is 97 K and T c(end) is 50 K. From the X-ray diffraction patterns, the c-axis of the superconducting crystal phase mostly orients perpendicular to the substrate. These present results seem to prove the usefulness of ZrO2 layer on Si for the further application of high-T c oxide films for a part of sophisticated electronics devices.