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February 1, 1990Japanese Journal of Applied PhysicsOpen Access

Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer

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Authors

HAHiroshi AmanoKyoto UniversityTATsunemori AsahiJapan Petroleum Energy CenterIAIsamu AkasakiNagoya University

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Amano et al. (1990) studied this question.

synapsesocial.com/papers/6a895fc7186271ac99333b08https://doi.org/10.1143/jjap.29.l205
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)1989 · 1,993 citations
  2. 2Stimulated Emission and Laser Action in Gallium Nitride1971 · 192 citations
  3. 3Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer1986 · 2,208 citations