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March 1, 1998Japanese Journal of Applied Physics

Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN

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Authors

MIMotoaki IwayaMeijo UniversityTTTetsuya TakeuchiMeijo UniversitySYShigeo YamaguchiNorthwest African American Museum

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Iwaya et al. (1998) studied this question.

synapsesocial.com/papers/6a895fe9a7eee2293bcafb3chttps://doi.org/10.1143/jjap.37.l316
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