Superior bipolar resistive switching behaviors of solution-processed HfAlOxthin film for nonvolatile memory applications

We report on the bipolar resistive switching behavior and uniform cumulative distribution of set/reset voltage observed from the resistive random access memory (ReRAM) device based on a solution-processed HfAlO x thin film. The HfAlO x thin film was spin-coated from a mixture of HfO x and AlO x solutions at ratio. The dominant conduction mechanism of a solution-processed HfAlO x thin film is found to be the ohmic behavior in the low-resistance state (LRS) and high-resistance state (HRS) in the low-voltage region, whereas the Poole–Frenkel emission is dominant in the HRS in the high-voltage region. Outstanding reliability in terms of endurance and retention characteristics was achieved. The solution-processed HfAlO x thin film can be a promising candidate for the application in ReRAM devices with glass or flexible substrates.