A systematic study on the switching mechanism of anAl/ Pr0.7Ca0.3MnO₃(PCMO) device was performed. A polycrystalline PCMO film was deposited using a conventional sputtering method. A thin Al layer was introduced to induce a reaction with the PCMO, forming aluminum oxide(AlOₓ). Transmission electron microscopy analysis of the interface between Al and PCMO showed that resistive switching was governed by the formation and dissolution ofAlOₓ. Some basic memory characteristics, such as good cycle endurance and data retention of up to10⁴s at 125∘C, were also obtained. It also showed excellent switching uniformity and high device yield.
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Seong et al. (2009) studied this question.
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