Enhancement of Ferroelectric Curie Temperature in BaTiO 3 Films via Strain‐Induced Defect Dipole Alignment

This is the authors' abstract. We don't add key points for this paper.

The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics.