The application of ferroelectric films to semiconductor memories is discussed. Design and testing considerations are examined. A nonvolatile memory using the polarization hysteresis of ferroelectrics is described. Test results for PZT films on GaAs substrate are presented. The data show that nonvolatile memories are feasible and that commercial applications are within reach in the near future.
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William A. Geideman (1991) studied this question.
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