A comparative study of hydrogen-induced degradation in epitaxial and polycrystalline (Ba,Sr)TiO3 (BST) thin films has been carried out. Epitaxial BST was prepared on SrRuO3 (SRO)/SrTiO3 (STO), whereas polycrystalline BST was deposited on SRO/SiOx/Si. After the Pt top electrode deposition, we have measured the dielectric response and leakage current characteristics before and after annealing in forming gas (6% hydrogen/94% argon) at 450 °C for 1 h. Even though both samples have the same capacitor architecture, Pt/BST/SRO, the degree of degradation after annealing in forming gas was found to be quite different. Epitaxial BST films were highly immune to hydrogen degradation; however, polycrystalline BST films degraded severely in terms of both dielectric and electrical properties. We show that the grain boundary is one of the main sources of hydrogen-induced degradation.
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Lee et al. (2004) studied this question.
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