Enhanced dielectric properties of BaTiO3nanocube assembled film in metal–insulator–metal capacitor structure

In this study, a BaTiO 3 (BT) nanocube assembly with metal–insulator–metal capacitor structure was fabricated by a dip-coating process. The BT nanocube assembly had relatively ordered structure after sintering. A high dielectric constant of approximately 3000 was achieved, with relatively low loss tangent. The enhanced dielectric properties of the nanocube assembled film were robust against thickness variation. We conjecture that the mechanism that enhanced the dielectric constant of the BT nanocube assembly is also contributed to by the effect of interfacial lattice strain between neighboring nanocubes.