SrTiO3 thin films deposited by electron-cyclotron-resonance (ECR) plasma sputtering at 400° C are investigated from the viewpoint of leakage current and dielectric breakdown strength. 100-nm-thick SrTiO3 samples with 400° C deposition followed by 400° C oxygen annealing show low leakage current density (on the order of 10-9 A/cm2 at 5 V) and high dielectric breakdown strength (>4 MV/cm). SrTiO3 thin films deposited by ECR sputtering at 400° C are promised for capacitor dielectrics of future 1-giga-bit dynamic-random-access memories.
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Itsumi et al. (1996) studied this question.
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