p-n Junction Photodiodes in PbTe Prepared by Sb+ Ion Implantation

n-p junction photovoltaic detectors in PbTe have been fabricated using Sb+ ion implantation to create the n-type layer. At 77 °K, 15-mil square diodes have had zero-bias resistances as high as 15 MΩ for a resistance-area product of 2.1×104 Ωcm2. Peak detectivities at 4.4 μm in reduced background as high as 1.6×1012 cmHz1/2/W were observed. Diode quantum efficiencies were typically 40% at 4.4 μm.