MOCVD of Single‐Axis c‐Oriented Strontium Bismuth Titanate Thin Films and Their Electrical Properties

SrBi4Ti4O15 (SBTi) films were fabricated for the first time at 700 °C by thermal metal‐organic (MO)CVD from a Bi(CH3)3‐Sr(O2C11H19)2(C8H23N5)2‐Ti(O·i‐C3H7)4‐O2 system. The deposition rate of each constituent oxide linearly increased with an increase in the input gas‐flow rate of the corresponding source. Perfectly single‐axis, c‐oriented SBTi films were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates by inserting a (100)c‐oriented LaNiO3 conductive buffer layer as an interfacial template. These films had a relative dielectric constant of about 140 which showed no decrease when the film thickness was reduced to 30 nm.