Dielectric Properties of Nanocrystalline Barium Titanate Thin Films Deposited by RF Magnetron Sputtering

The nanocrystalline thin films of BaTiO 3 have been deposited on the Pt/Ti/SiO 2 /Si substrates by RF magnetron sputtering at 500°C. The film deposited at 500°C has a thickness of 450.0 nm and is composed of granular crystallites of about 45.0 nm size. The crystallite size decreases with decreasing film thickness. The dielectric constant of the nanocrystalline BaTiO 3 thin films increases with increasing film thickness. For the film thicknesses of 150.0 and 450.0 nm, the leakage current density is below 1.0 × 10 -9 A/cm 2 for the applied voltage of less than 5 V.