Low Temperature Epitaxial Growth of High Permittivity Rutile TiO[sub 2] on SnO[sub 2]

Thin films of high dielectric constant rutile phase titanium dioxide were grown epitaxially on tin dioxide substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature was used with titanium(IV) tetrakis(isopropoxide) and hydrogen peroxide as precursors. The rutile thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces.