Surface-Emitting Laser with a Common-Anode Configuration for Application to the Photonic Parallel Memory

A novel structure of a vertical-cavity surface-emitting laser (VCSEL) was proposed and demonstrated. Using a common-anode configuration, lower mesa height and lower electrical resistance were realized. The threshold current was 6 mA for a 10-µm-diameter device under room-temperature pulsed operation. The lasing wavelength was 939 nm. This configuration is suitable for large-scale integration. We also propose an optoelectronic integrated circuit (OEIC) with the common-anode configuration, which consists of a VCSEL and a heterostructure phototransistor (HPT) for optical parallel processing.