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A new silicon-based PbTiO3/Pb(Zr0.53Ti0.47)O3/PbTiO3 (PT/PZT/PT) sandwich structure is prepared in this paper. A simple and low-cost sol-gel method is used to fabricate the ferroelectirc thin films. The annealing temperature (700 °C) is greatly reduced compared with 900 °C of that without PT layers. Capacitance-voltage (C-V), polarization-field (P-E) and dielectric-frequency properties of the sandwich structure are tested. The PZT films are proved to have good dielectric and ferroelectric properties. The relative dielectric constant, the coercive field and the remnant polarization of the PZT films are measured to be about 900, 18 kV/cm and 16 μC/cm2 respectively. The dielectric constant of the structure keeps constant at low frequency, and decreases in some degree at high frequency.
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Tian-Ling et al. (2001) studied this question.
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