Ferroelectric properties of plzt thin films prepared by mocvd

Lanthanum-modified lead zirconate titanate (PLZT) thin films have been grown on Pt/SiO2/Si substrate at 650[ddot]C by metalorganic chemical vapor deposition. The relative dielectric constant increased as the La content was increased up to about 5 atomic percent (at%). The remanent polarization and coercive field decreased from 30 to 20 μC/cm2 and from 53 to 30 kV/cm, respectively, with increasing La content in the range of 0–13 at%. The leakage current of PLZT film was 3 × 10−9 A/cm2 at an applied voltage of 3 V. The degradation of switched charge density of PLZT film was not observed even at 2 × 1011 cycles.