The effects of an electric field on the excitons in GaAs-GaAlAs quantum-well heterostructures have been studied by means of low-temperature photoluminescence and photocurrent spectroscopy. Increasing the electric field causes a red shift of the excitonic luminescence to energies well below the bulk GaAs band edge, and a corresponding decrease of the total luminescence efficiency. We find very good agreement between the energy thresholds obtained by luminescence and photocurrent measurements. A significant shift of the luminescence relative to the photocurrent is observed at high fields as a result of enhanced bound-exciton luminescence when electrons and holes move closer to the interfaces.
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Via et al. (1986) studied this question.
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