A novel sloped field plate (FP)-enhanced ultra-short edge termination structure is proposed and experimentally demonstrated. The structure features a benzocyclobutene dielectric filled trench, and is fabricated along with a high-voltage p-i-n diode. In addition, a sloped FP is put inside the trench and connected to the anode electrode. The fabricated device shows a breakdown voltage of 755 V, and is confirmed as the ideal planar junction breakdown voltage of the p-i-n diode. The proposed edge termination structure has a total width of 35 μm, which is ~1/5 the size of a conventional termination structure using the guard rings approach.
No takes yet. Share an insight, caveat, or question.
Yang et al. (2016) studied this question.
Synapse has enriched one closely related paper. Consider it for comparative context: