Numerical calculations are performed for contribution of various kinds of inelastic scattering, valence electron excitations (including the plasmon excitation), core electron excitations and phonon excitations on Kikuchi pattern of Si single crystal. An explanation of defect Kikuchi band is proposed by considering inelastic scatterings in detail. Two negative circle regions on the Kikuchi band are found theoretically. Experimental results corresponding to these calculations are also presented.
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Okamoto et al. (1971) studied this question.
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