A comparative study of optically detected cyclotron resonance in the microwave and far-infrared frequency range in epitaxial InP and GaAs is presented. The electron cyclotron resonances and the inter-impurity 1s-to-2p⁺ transitions are observed in both high-mobility layers. Cyclotron-resonance-induced impact ionization of shallow donors and bound excitons is the basic mechanism for the observation by photoluminescence.
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Moll et al. (1992) studied this question.