Photodiodes of indium tin oxide deposited on single-crystal p-silicon are analyzed with respect to their electronic properties. Dark measurements include the current and capacitance dependences on voltage and temperature. Photocurrent measurements reveal the relationship to the illumination intensity, temperature, and wavelength of light. Analysis reveals a relatively large, but temperature-dependent, built-in voltage and a small interface recombination probability.
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Chang et al. (1978) studied this question.
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