Preparation of Cu9Al4 Intermetallic Compound Films as a Metallization Material for LSI Technology

The intermetallic compound film of Cu9Al4 was prepared by cosputtering at substrate temperatures below 300°C. The prepared film is structurally quite stable up to about 700°C, showing little change in X-ray diffraction pattern. The film with well-textured polycrystalline grains has a low electrical resistivity of 13 µΩ-cm. It is revealed that the films obtained have sufficiently promising properties well applicable as metallization material for large-scale integrated circuits.