Characterization and Scalable Modeling of Power Semiconductors for Optimized Design of Traction Inverters with Si- and SiC-Devices

Silicon carbide (SiC) based power semiconductors are expected to contribute to an increase in inverter efficiency, switching frequencies, maximum permissible junction temperature, and system power density. This paper presents a comparison of silicon (Si) and SiC device technologies for the use in hybrid electric vehicle traction inverters. SiC-JFETs and SiC-MOSFETs are characterized and a scalable loss and scalable thermal modeling approach is used to find the optimum chip area for each Si or SiC traction inverter. This procedure also provides a proper technical comparison of the semiconductor technologies. The progressed simulations using standardized drive cycles and thermal-electrical coupled semiconductor models permit an inverter performance evaluation close to real load situations, leading to an improved estimation of the benefit which can be expected from systems utilizing SiC technology. This paper concludes that the SiC devices can lead to a reduction in chip area and semiconductor losses by more than 50% at the same time in hard switching applications with partial load dominated mission profiles.