Hot-carrier effects in high magnetic fields in silicon inversion layers at low temperatures: p channel

A study of hot-carrier effects in the presence of high magnetic fields in p-type silicon inversion layers is reported in a range of lattice temperatures between 1.25 and 20 K. Carrier temperatures Tc as a function of the electric field are deduced from measurements of the amplitude of Shubnikov-de Haas oscillations as a function of lattice temperature TL(TL<10 K) and electric field E at high inversion-layer densities for the (110) orientation. For higher lattice temperatures, Tc is deduced from the classical magnetoresistance. In addition, measurements of the surface conductivity σ as a function of the source drain electric field at low hole concentrations, where σ depends on the temperature and the surface orientation, have been performed. It is found σ is proportional to Eˢ with 0≤s≤3 over nearly two decades of E values.