Photoluminescence and reflection high-energy electron diffraction dynamics study of the interfaces in molecular beam epitaxially grown GaAs/Al0.33Ga0.67As(100) single quantum wells

Comparative photoluminescence studies of GaAs/Al0.33Ga0.67As(100) single quantum wells grown via molecular beam epitaxy at growth conditions identified by the reflection high-energy electron diffraction intensity static and dynamic behavior are shown, for the first time, to establish a connection between the RHEED determined growth conditions and the structural and chemical quality of the interfaces. This connection is explained on the basis of the expected consequences of the nature of the surface kinetic processes controlling formation of the normal and inverted interfaces.