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October 15, 1977Physical review. B, Solid state

Temperature dependence of dynamic conductivity of electrons in the surface inversion layer of semiconducting silicon

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Authors

AGA. K. GangulyEnergy and Resources InstituteCTC. S. TingUniversity of Houston

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Ganguly et al. (1977) studied this question.

synapsesocial.com/papers/6a89797ff514ef6d37c11618https://doi.org/10.1103/physrevb.16.3541
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  1. 1High-Frequency Conductivity of Electrons in Two-Dimensional Inversion Layers1976 · 51 citations
  2. 2Frequency-Dependent Cyclotron Effective Masses in Si Inversion Layers1975 · 79 citations
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  5. 5Theory of Oscillatory <i>g</i> Factor in an MOS Inversion Layer under Strong Magnetic Fields1974 · 472 citations