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September 1, 1974IEEE Transactions on Electron Devices

MOSFET thresholds at 4.2 K induced by cooling bias

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Authors

ATA.R. TokudaPLP.O. LauritzenUniversity of Washington

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Tokuda et al. (1974) studied this question.

synapsesocial.com/papers/6a89797ff514ef6d37c11621https://doi.org/10.1109/t-ed.1974.17975
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