Answers are grounded in this paper and cite their sources.
The low-T conductivity of lightly doped, compensated, crystalline n-type GaAs epilayers is described by σ=σ₀exp[-(T₀T)ˢ]+σcexp[-(Ec-EF)kBT]. s is found to vary from 0.2 to 0.27, implying that the Coulomb gap in the density of impurity states plays at best a minor role in the hopping conductivity ($T>1$ K) for ND~5×10¹⁵ cm^-3 and for compensations from 30% to 60%.
No takes yet. Share an insight, caveat, or question.
Benzaquen et al. (1984) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: