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Novel bridged-grain (BG) technique is applied in the fabrication of low-temperature solid-phase-crystallized polycrystalline-silicon thin-film transistors. As a result of improved current flow and reduction of high drain electric field, the subthreshold slope, threshold voltage, maximum field-effect mobility, leakage current, and on-off ratio are greatly improved. Mechanisms of BG conduction are studied in detail.
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Zhou et al. (2012) studied this question.
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