The NH3plasma passivation has been performed for the first time on the polycrystalline silicon (poly-Si) thin-film transistors (TFT's). It is found that the TFT's after the NH3plasma passivation achieve better device performances, including the off-current below 0.1 pA/μm and the on/off current ratio higher than 10/sup 8/, and also better hot-carrier reliability as well as thermal stability than the H2-plasma devices. These improvements were attributed to not only the hydrogen passivation of the grain-boundary dangling bonds, but also the nitrogen pile-up at SiO2/poly-Si interface and the strong Si-N bond formation to terminate the dangling bonds at the grain boundaries of the polysilicon films.
No takes yet. Share an insight, caveat, or question.
Wang et al. (1995) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: