The p-i-n junction-surface depletion-layer photodiode

With the aim of seeking the optimal structure for photodetectors, the p-i-n junction-surface depletion-layer photodiodes have been investigated. The structure of the photodiodes is different from that of the conventional photosensors. Experiments for the devices show that the structure of the p-i-n junction-surface depletion layer is very advantageous to the photodetector in becoming a high responsivity and wide-spectrum device. This device can be used in UV, visible and near-infrared ranges.>