Laser recrystallization of silicon stripes in SiO2 grooves with a polycrystalline silicon sublayer

A new substrate structure has been proposed for obtaining laser-recrystallized silicon on quartz glass. Single crystal Si stripes as large at 12×500 μm, dielectrically isolated with a width as small at 1.5 μm, have been obtained by use of the new structure, in which polysilicon stripes are placed in SiO2 grooves and a polycrystalline silicon sublayer is inserted between the SiO2 layer and quartz glass to improve the thermal profile in recrystallization. The proposed structure is useful for realizing both enlargement and positional control of Si grains.