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December 1, 1981Applied Physics Letters

n-channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2

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BTB-Y. TsaurMIT Lincoln LaboratoryMGM. W. GeisMIT Lincoln LaboratoryJFJohn C. C. FanChestnut Hill College

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Tsaur et al. (1981) studied this question.

synapsesocial.com/papers/6a7d1453fac401f27842508ahttps://doi.org/10.1063/1.92603
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