Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Graphene layer is successfully grown on insulated sapphire substrate through depositing a SiC buffer layer and annealing at high temperature with solid source molecular beam epitaxy (SSMBE). The structural properties of the epitaxial graphene layer are characterized by reflection high energy diffraction (RHEED), Raman spectroscopy and near edge X-ray absorption fine structure (NEXAFS). Graphene diffraction streaks hve been seen in RHEED. The Raman and XEXAFS results reveal that well-order graphene layer adhere to the substrate surface.