Theoretical analysis reveals direct band gap crossing at six atomic percent antimony in bismuth alloys, implying vanishing gap states explain unusually small effective carrier masses.
A simple model is proposed which unites many data on alloys of bismuth containing small amounts of antimony. Contrary to the usual interpretation of these data, we propose a crossing of the conduction and valence bands at L at about 6 at.% antimony (i.e., the direct gap, which is responsible for the very small effective masses in bismuth, vanishes at this composition).
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Stuart Golin (1968) studied this question.
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