A study of the low-temperature photoluminescence characteristics of very narrow one-dimensional quantum-well structures, grown by atmospheric pressure organometallic chemical vapor deposition, is presented. Theoretically predicted narrowing of photoluminescence peaks as quantum-well widths approach zero was experimentally observed in both AlGaAs/GaAs and strained GaAs/InGaAs samples. The role of such data in determining interface microstructure is discussed.
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Bertolet et al. (1988) studied this question.
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